Evaluation of poly(3-hexylthiophene)/polymeric insulator interface by charge modulation spectroscopy technique

Thin Solid Films

Volumn 518, Issue 2, 2009, Pages 810-813

  Itoh, Eiji ^a   Terashima, Kosuke ^a   Nagai, Hiroshi ^a   Miyairi, Keiichi ^a  

^a SHINSHU UNIVERSITY   (Japan)

Author keywords

Charge modulation spectroscopy; MIS diode; Polaron; Poly(3 hexylthiophene); Sub band gap states

Indexed keywords

AL ELECTRODE; C-V CHARACTERISTIC; CHARGE MODULATION; CHARGE MODULATION SPECTROSCOPY; CONJUGATION LENGTH; DELOCALIZED POLARONS; DEPLETION LAYER; EXTERNAL VOLTAGES; FIELD-EFFECT MOBILITIES; GATE INSULATOR; MIS DIODE; MIS DIODES; OXYGEN MOLECULE; PEAK INTENSITY; POLY(3-HEXYLTHIOPHENE); POLYMERIC INSULATORS; SCHOTTKY DIODES; SUB-BAND GAP STATES; SUB-BANDS; TRAPPED CHARGE;

CARRIER MOBILITY; DIELECTRIC FILMS; ENERGY GAP; MODULATION; MOLECULAR SPECTROSCOPY; OPTICAL TRANSITIONS; OXYGEN; POLARONS; POLYMERS; SCHOTTKY BARRIER DIODES; SOLENOIDS; SWITCHING CIRCUITS;

DIODES;

EID: 70349876269     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.07.091     Document Type: Article

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