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Volumn 3, Issue 9, 2010, Pages

Crystal phase-selective epitaxy of rutile and anatase Nb-doped TiO 2 films on a GaN template by the helicon-wave-excited-plasma sputtering epitaxy method

(5) Hazu, Kouji a Fouda, Aly a Nakayama, Tokuyuki b Tanaka, Akikazu b Chichibu, Shigefusa F a

a TOHOKU UNIVERSITY (Japan)

b SUMITOMO METAL MINING CO LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANATASE TIO; CRYSTAL PHASE; DOPED-TIO; GAN TEMPLATE; HETEROSTRUCTURES; HIGH-T; IN-PLANE; PLASMA SPUTTERING; PRESSURE CONDITIONS; RUTILE AND ANATASE; SELECTIVE EPITAXY; TIO;

EPITAXIAL GROWTH; GALLIUM NITRIDE; HELICONS; MONOLAYERS; OXIDE MINERALS; THICK FILMS; TITANIUM DIOXIDE;

GALLIUM ALLOYS;

EID: 77956759429 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.3.091102 Document Type: Article

Times cited : (12)

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