Properties of TiO2-based transparent conducting oxide thin films on GaN(0001) surfaces

Journal of Applied Physics

Volumn 107, Issue 5, 2010, Pages

  Kasai, J ^a   Hitosugi, T ^a,b   Moriyama, M ^c   Goshonoo, K ^c   Hoang, N L H ^d   Nakao, S ^a   Yamada, N ^a   Hasegawa, T ^a,d  

^a KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c Toyoda Gosei Co Ltd   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTANCE; ANATASE FILMS; BLUE LEDS; DOPED-TIO; EXTERNAL QUANTUM EFFICIENCY; IN-VACUUM; PROMISING MATERIALS; ROOM TEMPERATURE; SPUTTERING METHODS; SUBSTRATE TEMPERATURE; TIO; TRANSPARENT CONDUCTING OXIDE; TRANSPARENT CONDUCTING OXIDE THIN FILMS; TRANSPARENT ELECTRODE;

CONDUCTIVE FILMS; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; LIGHT REFLECTION; ORGANIC LIGHT EMITTING DIODES (OLED); OXIDE FILMS; REFRACTIVE INDEX; TITANIUM DIOXIDE;

AMORPHOUS FILMS;

EID: 77949745766     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3326943     Document Type: Article

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