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Applied Physics Express

Volumn 2, Issue 10, 2009, Pages

Helicon-wave-excited-plasma sputtering as an expandable epitaxy method for planar semiconductor thin films

(4) Amaike, Hiroaki a Hazu, Kouji a Sawai, Yutaka a Chichibu, Shigefusa F a

a TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC STEP; DAMAGE-FREE; EPILAYERS GROWN; EXCITON POLARITONS; EXCITONIC EMISSION; HOMOEPITAXY; LOW TEMPERATURES; OPTICAL QUALITIES; PLANAR SEMICONDUCTORS; PLASMA SPUTTERING; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SMOOTH SURFACE; ZNO;

CRYSTAL GROWTH; EMISSION SPECTROSCOPY; EPILAYERS; EXCITONS; HELICONS; MONOLAYERS; PLASMAS; SEMICONDUCTOR QUANTUM WELLS; ZINC; ZINC OXIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 70350532914 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.2.105503 Document Type: Article

Times cited : (8)

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- The parameters used were: A!T = 3:3778 eV; B? = 3:3916 eV; Bk = 3:3808 eV; C? = 3:4196 eV; Ck = 3:4326 eV: oscillator strengths: B? = 15:0- 10-3; Bk = 0:403- 10-3; C? = 0:201- 10-3; Ck = 30:0- 10-3: spin-orbit splitting 8.7 meV: crystal field splitting 37.6 meV
- The parameters used were: A!T = 3:3778 eV; B? = 3:3916 eV; Bk = 3:3808 eV; C? = 3:4196 eV; Ck = 3:4326 eV: oscillator strengths: B? = 15:0- 10-3; Bk = 0:403- 10-3; C? = 0:201- 10-3; Ck = 30:0- 10-3: spin-orbit splitting 8.7 meV: crystal field splitting 37.6 meV.

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