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Vacuum

Volumn 85, Issue 2, 2010, Pages 231-235

Effect of bias voltage on growth property of Cr-DLC film prepared by linear ion beam deposition technique

(4) Dai, Wei a Zheng, He a Wu, Guosong a Wang, Aiying a

a NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING (China)

Author keywords

Atomic bond structure; Bias voltage; Cr DLC; Properties; Surface topography

Indexed keywords

AFM; AS-DEPOSITED FILMS; ATOMIC BONDS; CARBIDE PHASE; CHROMIUM CONCENTRATION; CR-DLC; CR-DOPING; DC MAGNETRON SPUTTERING; DLC FILM; FLAT SURFACES; GROWTH PROPERTIES; HARDNESS AND ELASTIC MODULUS; LINEAR ION BEAMS; NEGATIVE BIAS; PROPERTIES; ROUGH SURFACES; SEM; XPS;

ATOMIC SPECTROSCOPY; ATOMS; CARBIDES; CARBON FILMS; CHEMICAL MODIFICATION; CHROMIUM; CRYSTAL ATOMIC STRUCTURE; DIAMOND LIKE CARBON FILMS; FILM GROWTH; ION BEAMS; ION BOMBARDMENT; IONS; MECHANICAL PROPERTIES; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SURFACE TOPOGRAPHY; TOPOGRAPHY;

BIAS VOLTAGE;

EID: 77956612072 PISSN: 0042207X EISSN: None Source Type: Journal
DOI: 10.1016/j.vacuum.2010.06.001 Document Type: Article

Times cited : (108)

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