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Volumn 13, Issue 11, 2010, Pages

Low voltage operating InGaZnO4 thin film transistors with sputter-deposited PMMA/High- k BST stacked gate dielectric layers

(4) Kim, Dong Hun a Cho, Nam Gyu b Kim, Ho Gi b Kim, Il Doo c

a Massachusetts Institute of Technology (United States)

b Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

c Korea Institute of Science and Technology (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL PROPERTY; HIGH FIELD EFFECT MOBILITY; LOW THRESHOLD VOLTAGE; LOW VOLTAGES; ON/OFF CURRENT RATIO; POLY(ETHYLENE TEREPHTHALATE) SUBSTRATE; STACKED GATE; TIO;

BARIUM; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; ESTERS; ETHYLENE; GATES (TRANSISTOR); POLYETHYLENE TEREPHTHALATES; THIN FILM TRANSISTORS; THIN FILMS;

GATE DIELECTRICS;

EID: 77956562443 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3479689 Document Type: Article

Times cited : (6)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.