SCOPUS 정보 검색 플랫폼

Journal of Sol-Gel Science and Technology

Volumn 55, Issue 3, 2010, Pages 369-376

Influences of preferred orientation growth on electrical properties of ZnO:Al films by sol-gel method

(4) Lin, Keh Moh a Chen, Hsin Cheng a Chen, Yu Yu a Chou, Keng Yu a

a SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

Author keywords

Aluminum doping; Electrical property; Preferred orientation growth; Sol Gel; Transparent conductive oxide; Zinc oxide

Indexed keywords

AZO FILMS; CRYSTALLOGRAPHIC QUALITY; DIFFERENT PRECURSORS; ELECTRICAL PROPERTY; FILM CONDUCTIVITY; HEATING METHOD; KEY FACTORS; LOW ACTIVATION; MICRO-STRUCTURAL; MONOETHANOLAMINE; PREFERRED ORIENTATIONS; SILICON SUBSTRATES; SOL-GEL METHODS; STEEP TEMPERATURE GRADIENT; TRANSPARENT CONDUCTIVE OXIDES; ZNO; ZNO FILMS; ZNO:AL FILMS;

ALUMINUM; CARRIER CONCENTRATION; CARRIER MOBILITY; DOPING (ADDITIVES); ELECTRIC PROPERTIES; FILM GROWTH; GELS; METALLIC FILMS; SOL-GEL PROCESS; SOL-GELS; SOLS; ZINC; ZINC OXIDE;

FILM PREPARATION;

EID: 77956470885 PISSN: 09280707 EISSN: None Source Type: Journal
DOI: 10.1007/s10971-010-2252-3 Document Type: Article

Times cited : (19)

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