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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 5, 2007, Pages 1689-1693

Growth of non-polar (1120) and semi-polar (1126) AlN and GaN films on the R-plane sapphire

(5) Chandrasekaran, R a Ozcan, A S b Deniz, D c Ludwig, K F b Moustakas, T D a,b

a Boston University (United States)

b Boston University (United States)

c Univ of New Hampshire (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; ALN BUFFER; COMPOUND SEMICONDUCTORS; CRYSTALLOGRAPHIC ORIENTATIONS; GAN FILMS; III NITRIDES; INTERNATIONAL SYMPOSIUM; KINETIC CONDITIONS; NITRIDE FILMS; NON-POLAR; PLANE SAPPHIRE; RICH CONDITIONS; SAPPHIRE SURFACES;

ARSENIC COMPOUNDS; CHLORINE COMPOUNDS; CORUNDUM; CRYSTALS; ECOLOGY; ELECTRIC CONDUCTIVITY; GALLIUM NITRIDE; NITRIDES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SUBSTRATES;

GALLIUM ALLOYS;

EID: 44149092447 PISSN: 18626351 EISSN: None Source Type: Journal
DOI: 10.1002/pssc.200674288 Document Type: Conference Paper

Times cited : (10)

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