Conformability of ruthenium dioxide films prepared on substrates with capacitor holes by MOCVD and modification by annealing

Electrochemical and Solid-State Letters

Volumn 9, Issue 11, 2006, Pages

  Kawano, Kazuhisa ^a   Kosuge, Hiroaki ^a   Oshima, Noriaki ^a   Funakubo, Hiroshi ^b  

^a TOSOH CORPORATION   (Japan)

^b Tokyo Institute of Technology ^*  (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ASPECT RATIO; DEGRADATION; DEPOSITION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; THIN FILMS;

CAPACITOR HOLES; CONFORMAL FILM DEPOSITION; FILM CRYSTALLINITIES; RUTHENIUM DIOXIDE;

RUTHENIUM COMPOUNDS;

EID: 33748700403     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2336992     Document Type: Article

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