Low resistivity ITO thin films deposited by ncd technique at low temperature: Variation of tin concentration

Journal of the Electrochemical Society

Volumn 157, Issue 10, 2010, Pages

  Pammi, S V ^a   Chanda, Anupama ^a   Ahn, Jun Ku ^a   Park, Jong Hyun ^a   Cho, Chae Ryong ^b   Lee, Won Jae ^c   Yoon, Soon Gil ^a  

^a Chungnam National University   (South Korea)

^b Pusan National University   (South Korea)

^c Dong Eui University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON CONTENT; DISPLAY TECHNOLOGIES; FOUR-POINT PROBE; HALL PROBE MEASUREMENTS; HIGH QUALITY; HYDROXYL GROUPS; INDIUM TIN OXIDE THIN FILMS; ITO FILMS; ITO THIN FILMS; LOW RESISTIVITY; LOW TEMPERATURES; NANOCLUSTER DEPOSITION; OPTICAL TRANSPARENCY; ORGANIC CONTAMINATION; SURFACE CHEMICAL PROPERTIES; TRANSPARENT ELECTRODE; X RAY FLUORESCENCE;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CARBON FILMS; CHEMICAL PROPERTIES; DEPOSITION; INDIUM COMPOUNDS; ORGANOMETALLICS; OXIDE FILMS; PROBES; SCANNING ELECTRON MICROSCOPY; THIN FILMS; TIN; TIN OXIDES; TITANIUM COMPOUNDS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; X RAYS;

ITO GLASS;

EID: 77956206850     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3467802     Document Type: Article

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