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Volumn , Issue , 2010, Pages 711-716

In-situ characterization and extraction of SRAM variability

Author keywords

Data retention voltage; Extraction; SRAM test; Threshold voltage variation; Write margin

Indexed keywords

ACCURATE PREDICTION; DATA RETENTION VOLTAGES; EFFICIENT DECOMPOSITION; EXTERNAL VOLTAGES; IN-SITU CHARACTERIZATION; NON-ITERATIVE METHOD; PERFORMANCE VARIABILITY; PREDICTION ERRORS; PROCESS IMPROVEMENT; QUASI-STATIC; ROBUST DESIGNS; SINGLE-ENDED; SRAM CELL; SRAM CELL STABILITY; SRAM TEST; TEST CHIPS; TEST PROCEDURES; TEST STRUCTURE; THRESHOLD VOLTAGE VARIATION; WRITE MARGIN;

EID: 77956196819     PISSN: 0738100X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1145/1837274.1837454     Document Type: Conference Paper
Times cited : (2)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.