Universality of short-channel effects in undoped-body silicon nanowire MOSFETs

IEEE Electron Device Letters

Volumn 31, Issue 9, 2010, Pages 903-905

  Bangsaruntip, Sarunya ^a   Cohen, Guy M ^a   Majumdar, Amlan ^a   Sleight, Jeffrey W ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Fully depleted SOI (FDSOI); gate all around (GAA); MOSFETs; short channel effects; silicon nanowire (NW)

Indexed keywords

FULLY DEPLETED SOI; GATE-ALL-AROUND (GAA); MOSFETS; SHORT-CHANNEL EFFECT; SILICON NANOWIRE (NW);

GALLIUM ALLOYS; MOSFET DEVICES; NANOWIRES; SILICON ON INSULATOR TECHNOLOGY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77956171905     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2052231     Document Type: Article

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