Atomic layer deposited HfO2 gate dielectrics for low-voltage operating, high-performance poly-(3-hexythiophene) organic thin-film transistors

Organic Electronics

Volumn 11, Issue 11, 2010, Pages 1719-1722

  Yoon, Woo Jun ^a   Berger, Paul R ^a,b  

^a The Ohio State University   (United States)

^b OHIO STATE UNIVERSITY   (United States)

Author keywords

Atomic layer deposition; Field effect mobility; High k gate dielectric; Organic thin film transistor; Poly (3 hexythiophene)

Indexed keywords

ATOMIC LAYER DEPOSITION; ATOMS; CAPACITANCE; CHEMICAL SENSORS; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; HAFNIUM OXIDES; HIGH-K DIELECTRIC; PHOTOTRANSISTORS; POWER TRANSISTORS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE;

ATOMIC LAYER DEPOSITED; CAPACITANCE VOLTAGE CHARACTERISTIC; FIELD-EFFECT MOBILITIES; HIGH FIELD EFFECT MOBILITY; HIGH- K GATE DIELECTRICS; OCTADECYLTRICHLOROSILANE; ORGANIC THIN FILM TRANSISTORS; POLY(3-HEXYTHIOPHENE);

GATE DIELECTRICS;

EID: 77956000065     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2010.07.026     Document Type: Article

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