Relationship between the microscopic morphology and the charge transport properties in poly(S-hexylthiophene) field-effect transistors

Journal of Applied Physics

Volumn 100, Issue 3, 2006, Pages

  Surin, M ^a,b   Leclere Ph ^a   Lazzaroni, R ^a   Yuen, J D ^b   Wang, G ^b   Moses, D ^b   Heeger, A J ^b   Cho, S ^c   Lee, K ^c  

^a UNIVERSITY OF MONS   (Belgium)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c Pusan National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FILM MICROSTRUCTURES; HEXAMETHYLDISILAZANE; MICROSCOPIC MORPHOLOGY; SILICON OXIDE GATE INSULATORS;

CHARGE TRANSFER; DEPOSITION; MICROSCOPIC EXAMINATION; MICROSTRUCTURE; THIN FILMS; TRANSPORT PROPERTIES;

FIELD EFFECT TRANSISTORS;

EID: 33747349448     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2222065     Document Type: Article

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