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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 1850-1852

Mg-related acceptors in GaN

(11) Monemar, B a Paskov, P P a Pozina, G a Hemmingsson, C a Bergman, J P a Amano, H b Akasaki, I b Figge, S c Hommel, D c Paskova, T d Usui, A e

a LINKÖPING UNIVERSITY (Sweden)

b MEIJO UNIVERSITY (Japan)

c UNIVERSITY OF BREMEN (Germany)

d KYMA TECHNOLOGIES INC (United States)

e FURUKAWA CO LTD (Japan)

Author keywords

Doping; GaN; Impurity levels; MOVPE; Photoluminescence

Indexed keywords

BOUND EXCITON; COMPENSATION PROBLEMS; DEEP DONOR; DONOR-ACCEPTOR PAIRS; DOPING; GAN; GAN TEMPLATE; IMPURITY LEVELS; MG-DOPED; MOVPE; PHOTOLUMINESCENCE SPECTRUM; PL EMISSION;

BINDING ENERGY; GALLIUM ALLOYS; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SUPERCOMPUTERS;

GALLIUM NITRIDE;

EID: 77955810772 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200983436 Document Type: Conference Paper

Times cited : (16)

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