Active low temperature oxidation as a route to minimize electrode-oxide interface reactions in nanoscale capacitors

Journal of Applied Physics

Volumn 108, Issue 2, 2010, Pages

  Podpirka, Adrian ^a   Viswanath, B ^a   Ramanathan, Shriram ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-THERMAL; APPLIED FIELD; BOTTOM ELECTRODES; DIELECTRIC CONSTANTS; DIELECTRIC LOSS TANGENT; ELECTRICAL CHARACTERISTIC; ELECTRODE-OXIDE INTERFACES; ELECTRONIC PACKAGING; FREQUENCY DISPERSION; INTERFACIAL REACTIONS; LOSS TANGENT; LOW TEMPERATURE PROCESSING; LOW-TEMPERATURE OXIDATION; NANOSCALE CAPACITORS; ON-CHIP DECOUPLING CAPACITORS; OXIDE THIN FILMS; OXIDIZED FILMS; PROCESSING CONDITION; PROCESSING ROUTE; RE-OXIDATION; REACTIVE MATERIALS; REACTIVE METALS; REDUCED LOSS; THERMODYNAMICS AND KINETICS; TIO;

BARIUM; CAPACITORS; DIELECTRIC LOSSES; ELECTRODES; ELECTRONICS PACKAGING; LEAKAGE CURRENTS; OXIDATION; OXIDE FILMS; PHOTONS; THIN FILMS;

ELECTROLYTIC CAPACITORS;

EID: 77955778611     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3456446     Document Type: Article

References (31)

1. S. K. Bhattacharya and R. R. Tummala, J. Mater. Sci.: Mater. Electron. JSMEEV 0957-4522 11, 253 (2000). 10.1023/A:1008913403211
2. C. S. Hwang, Mater. Sci. Eng., B MSBTEK 0921-5107 56, 178 (1998). 10.1016/S0921-5107(98)00233-5
3. M. W. Cole, C. Hubbard, E. Ngo, M. Ervin, M. Wood, and R. G. Geyer, J. Appl. Phys. JAPIAU 0021-8979 92, 475 (2002). 10.1063/1.1484231
4. S. Zhong, S. P. Alpay, and J. V. Mantese, Appl. Phys. Lett. APPLAB 0003-6951 89, 042906 (2006). 10.1063/1.2236265
5. Z. -G. Ban and S. P. Alpay, J. Appl. Phys. JAPIAU 0021-8979 93, 504 (2003). 10.1063/1.1524310
6. R. K. Ulrich and L. W. Schaper, Integrated Passive Component Technology (IEEE, New York, 2003). 10.1002/9780471722939
7. R. R. Tummala, IEEE Spectrum IEESAM 0018-9235 43, 44 (2006). 10.1109/MSPEC.2006.1638044
8. P. Padmini, T. R. Taylor, M. J. Lefevre, A. S. Nagra, R. A. York, and J. S. Speck, Appl. Phys. Lett. APPLAB 0003-6951 75, 3186 (1999). 10.1063/1.125272
9. M. W. Cole and R. G. Geyer, Mech. Mater. MSMSD3 0167-6636 36, 1017 (2004). 10.1016/j.mechmat.2003.04.001
10. B. Laughlin, J. Ihlefeld, and J. -P. Maria, J. Am. Ceram. Soc. JACTAW 0002-7820 88, 2652 (2005). 10.1111/j.1551-2916.2005.00488.x
11. S. M. Aygün, P. Daniels, W. Borlands, and J. -P. Maria, J. Appl. Phys. JAPIAU 0021-8979 103, 084123 (2008). 10.1063/1.2909920
12. P. C. McIntyre, J. Appl. Phys. JAPIAU 0021-8979 89, 8074 (2001). 10.1063/1.1369402
13. M. Tsuchiya, S. K. R. S. Sankaranarayanan, and S. Ramanathan, Prog. Mater. Sci. PRMSAQ 0079-6425 54, 981 (2009). 10.1016/j.pmatsci.2009.04.003
14. M. Tsuchiya, V. Shutthandan, M. Engelhard, and S. Ramanathan, Appl. Phys. Lett. APPLAB 0003-6951 93, 263109 (2008). 10.1063/1.3058691
15. V. Craciun and R. K. Singh, Appl. Phys. Lett. APPLAB 0003-6951 76, 1932 (2000). 10.1063/1.126216
16. R. Merkle and J. Maier, Angew. Chem., Int. Ed. ACIEF5 1433-7851 47, 3874 (2008). 10.1002/anie.200700987
17. J. -S. Lee, Y. Li, Y. Lin, S. Y. Lee, and Q. X. Jia, Appl. Phys. Lett. APPLAB 0003-6951 84, 3825 (2004). 10.1063/1.1745105
18. Y. -L. Qin, C. -L. Jia, R. Liedtke, R. Waser, and K. Urban, J. Am. Ceram. Soc. JACTAW 0002-7820 86, 1190 (2003). 10.1111/j.1151-2916.2003.tb03446.x
19. S. -I. Jang and H. M. Jang, Ceram. Int. CINNDH 0272-8842 26, 421 (2000). 10.1016/S0272-8842(99)00073-5
20. R. Schafranek, J. Schaffner, and A. Klein, J. Eur. Ceram. Soc. JECSER 0955-2219 30, 187 (2010). 10.1016/j.jeurceramsoc.2009.05.009
21. M. S. Tsai and T. Y. Tseng, J. Phys. D: Appl. Phys. JPAPBE 0022-3727 32, 2141 (1999). 10.1088/0022-3727/32/17/301
22. M. W. Cole, W. D. Nothwang, C. Hubbard, E. Ngo, and M. Ervin, J. Appl. Phys. JAPIAU 0021-8979 93, 9218 (2003). 10.1063/1.1569392
23. M. Shen, Z. Dong, Z. Gan, S. Ge, and W. Cao, Appl. Phys. Lett. APPLAB 0003-6951 80, 2538 (2002). 10.1063/1.1468259
24. S. C. Roy, G. L. Sharma, and M. C. Bhatnagar, Solid State Commun. SSCOA4 0038-1098 141, 243 (2007). 10.1016/j.ssc.2006.11.007
25. C. -L. Chang and S. Ramanathan, J. Electrochem. Soc. JESOAN 0013-4651 154, G160 (2007). 10.1149/1.2737347
26. S. K. R. S. Sankaranarayanan, E. Kaxiras, and S. Ramanathan, Energy Environ. Sci. EESNBY 1754-5692 2, 1196 (2009). 10.1039/b913154j
27. T. Hara, IEEE Trans. Device Mater. Reliab. ITDMA2 1530-4388 4, 640 (2004).
28. M. B. Okatan and S. P. Alpay, Appl. Phys. Lett. APPLAB 0003-6951 95, 092902 (2009). 10.1063/1.3222871
29. R. A. De Souza, Phys. Chem. Chem. Phys. PPCPFQ 1463-9076 8, 890 (2006). 10.1039/b511702j
30. J. A. Lane and J. A. Kilner, Solid State Ionics SSIOD3 0167-2738 136-137, 927 (2000). 10.1016/S0167-2738(00)00530-0
31. J. -H. Joo, J. -M. Seon, Y. -C. Jeon, K. -Y. Oh, J. -S. Roh, and J. -J. Kim, Appl. Phys. Lett. APPLAB 0003-6951 70, 3053 (1997). 10.1063/1.118746