The dependence of dielectric properties on compositional variation for tunable device applications

Mechanics of Materials

Volumn 36, Issue 10, 2004, Pages 1017-1026

  Cole, M W ^a   Geyer, R G ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Deposition process; Dielectric properties; Film microstructure; Microwave measurements

Indexed keywords

ANNEALING; BARIUM COMPOUNDS; CAPACITORS; DEPOSITION; DIELECTRIC PROPERTIES; INSULATION; MICROSTRUCTURE; MICROWAVE DEVICES; PLATINUM; THIN FILMS;

DEPOSITION PROCESSES; FILM MICROSTRUCTURE; METALORGANIC SOLUTION DEPOSITION (MOSD); MICROWAVE MEASUREMENTS;

MATERIALS SCIENCE;

EID: 2642577449     PISSN: 01676636     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mechmat.2003.04.001     Document Type: Conference Paper

References (15)

1. 3 thin films. Appl. Phys. Lett. 74:1999;1033-1035.
2. 3 thin films for tunable device applications. Thin Solid Films. 374:2000;34-41.
3. 3 thin films for tunable device applications. J. Appl. Phys. 89:2001;6336-6340.
4. Gopalan S., Wong C.-H., Balu V., Lee J.-H., Han J.H., Mohammedali R., Lee J. Effect of niobium doping on the microstructure and electrical properties of strontium titanate thin films for semiconductor memory application. Appl. Phys. Lett. 75:1999;2123-2125.
5. Horwitz J.S., Chang W., Carter A.C., Pond J.M., Kirchoefer S.W., Chrisey D.B., Levy J., Hubert C. Structure/property relationships in ferroelectric thin films for frequency agile microwave electronics. Integr. Ferroelectr. 22:1998;279-289.
6. Hwang C.C., Juang M.-J., Lai M.-J., Jaing C.-C., Chen J.-S., Huang S., Cheng H.-C. Effect of rapid thermal-annealed TiN barrier layer on the Pt/BST/Pt capacitors prepared by RF magnetron co-sputter technique at low substrate temperature. Solid State Electron. 45:2001;121-125.
7. 3 thin films for tunable microwave applications. Appl. Phys. Lett. 77:2000;289-291.
8. 3 ferroelectric thin films. Appl. Phys. Lett. 69:1996;25-27.
9. 3). J. Appl. Phys. 83:1998;3288-3297.
10. 3 thin films. Thin Solid Films. 386:2001;91-98.
11. 3 thin films. J. Appl. Phys. 87:2000;3056-3062.
12. 3 thin films on Pt electrodes. Thin Solid Films. 323:1998;63-67.
13. 3 thin films prepared by radio-frequency magnetron sputtering. J. Appl. Phys. 82:1997;3482-3487.
14. 3 thin films for microwave device applications at room temperature. Integr. Ferroelectr. 22:1998;292-305.
15. Zafar S., Jones R.E., Chu P., White B., Jiang B., Taylor D., Zurcher P., Gillepsie S. The electronic conduction mechanism in barium strontium titanate thin films. Appl. Phys. Lett. 72:1998;2820-3535.