Effect of oxygen to argon ratio on defects and electrical conductivities in Ba0.47Sr0.53TiO3 thin-film capacitors

Journal of Physics D: Applied Physics

Volumn 32, Issue 17, 1999, Pages 2141-2145

  Tsai, M S ^a   Tseng, T Y ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; BARIUM COMPOUNDS; CAPACITANCE; CRYSTAL DEFECTS; DIELECTRIC FILMS; DIELECTRIC RELAXATION; ELECTRIC ADMITTANCE; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC IMPEDANCE; IONIC CONDUCTION IN SOLIDS; OXYGEN; THIN FILM DEVICES;

THIN FILM CAPACITORS;

CERAMIC CAPACITORS;

EID: 0032659909     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/32/17/301     Document Type: Article

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