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Volumn 89, Issue 4, 2006, Pages

High capacity oxide/ferroelectric/oxide stacks for on-chip charge storage

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL FRACTION; DIELECTRIC THICKNESS; LINEAR DIELECTRICS; SPONTANEOUS POLARIZATION;

EID: 33746595366     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2236265     Document Type: Article
Times cited : (5)

References (17)
  • 1
    • 31744439912 scopus 로고    scopus 로고
    • Springer Series in Advanced Microelectronics edited by K. Itoh, T. Lee, T. Sakurai, W. M. C. Sansen, and D. Schimitt-Landsiedel Springer, Berlin
    • H. R. Huff and D. C. Gilmer, in High Dielectric Constant Materials: VLSI MOSFET Applications, Springer Series in Advanced Microelectronics Vol. 16, edited by K. Itoh, T. Lee, T. Sakurai, W. M. C. Sansen, and D. Schimitt-Landsiedel (Springer, Berlin, 2004).
    • (2004) High Dielectric Constant Materials: VLSI MOSFET Applications , vol.16
    • Huff, H.R.1    Gilmer, D.C.2
  • 13
    • 33749460266 scopus 로고
    • Landolt-Börnstein, New Series, Group III, edited by K.-H. Hellwege and A. M. Hellwege Springer, Berlin
    • T. Mitsui, E. Nakamura, and K. Gesi, in Ferroelectrics and Related Substances, Landolt-Börnstein, New Series, Group III, Vol. 16, Pt. A, edited by K.-H. Hellwege and A. M. Hellwege (Springer, Berlin, 1981).
    • (1981) Ferroelectrics and Related Substances , vol.16 , Issue.PT. A
    • Mitsui, T.1    Nakamura, E.2    Gesi, K.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.