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Volumn 97, Issue 4, 2010, Pages

Recombination effects during expansion into vacuum in laser produced Sn plasma

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE STATE DISTRIBUTION; ELECTRON DENSITIES; EXTREME ULTRAVIOLET; IN-VACUUM; LASER WAVELENGTH; PLANAR TARGET; RECOMBINATION PROCESS; X-RAY SOURCES;

EID: 77955746762     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3473817     Document Type: Article
Times cited : (19)

References (15)
  • 4
    • 0030417039 scopus 로고    scopus 로고
    • LPBEDA 0263-0346,. 10.1017/S0263034600010090
    • I. V. Roudskoy, Laser Part. Beams LPBEDA 0263-0346 14, 369 (1996). 10.1017/S0263034600010090
    • (1996) Laser Part. Beams , vol.14 , pp. 369
    • Roudskoy, I.V.1
  • 6
    • 33748678944 scopus 로고    scopus 로고
    • Mitigation of fast ions from laser-produced Sn plasma for an extreme ultraviolet lithography source
    • DOI 10.1063/1.2349831
    • Y. Tao and M. S. Tillack, Appl. Phys. Lett. APPLAB 0003-6951 89, 111502 (2006). 10.1063/1.2349831 (Pubitemid 44396552)
    • (2006) Applied Physics Letters , vol.89 , Issue.11 , pp. 111502
    • Tao, Y.1    Tillack, M.S.2
  • 13
    • 0016036863 scopus 로고
    • PLPHBZ 0032-1028,. 10.1088/0032-1028/16/3/002
    • P. T. Rumsby and J. W. M. Paul, Plasma Phys. PLPHBZ 0032-1028 16, 247 (1974). 10.1088/0032-1028/16/3/002
    • (1974) Plasma Phys. , vol.16 , pp. 247
    • Rumsby, P.T.1    Paul, J.W.M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.