Optimization of VI/II pressure ratio in ZnTe growth on GaAs(0 0 1) by molecular beam epitaxy

Applied Surface Science

Volumn 256, Issue 22, 2010, Pages 6881-6886

  Zhao, Jie ^a   Zeng, Yiping ^a   Liu, Chao ^a   Cui, Lijie ^a   Li, Yanbo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Atomic force microscopy; Molecular beam epitaxy; Reflection high energy electron diffraction; X ray diffraction; ZnTe

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPILAYERS; GALLIUM ARSENIDE; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM; TELLURIUM COMPOUNDS; X RAY DIFFRACTION; ZINC;

BEAM EQUIVALENT PRESSURE; EPITAXIAL THIN FILMS; RATE MEASUREMENTS; ROOT MEAN SQUARE ROUGHNESS; STICKING COEFFICIENTS; TWO DIMENSIONAL (2 D); X RAY ROCKING CURVE; ZNTE;

ZINC COMPOUNDS;

EID: 77955664472     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.04.105     Document Type: Article

References (26)

1. J.H. Chang, T. Takai, K. Godo, J.S. Song, B.H. Koo, T. Hanada, and T. Yao Phys. Stat. Sol. B 229 2002 995
2. T. Tanaka, M. Nishio, Q. Guo, and H. Ogawa Jpn. J. Appl. Phys. 48 2009 022203
3. H.P. Wagner, M. Kühnelt, G. Wein, B. Hahn, W. Gebhardt, D. Eisert, G. Bacher, and A. Forchel J. Lumin. 72-74 1997 87
4. D. Turchinovich, and J.I. Dijkhuis Opt. Commun. 270 2007 96
5. Q. Guo, Y. Kume, Y. Fukuhara, T. Tanaka, M. Nishio, H. Ogawa, M. Hiratsuka, M. Tani, and M. Hangyo Solid State Commun. 141 2007 188
6. J. Han, T.S. Stavrinides, M. Kobayashi, R.L. Gunshor, M.M. Hagerott, and A.V. Nurmikko Appl. Phys. Lett. 62 1993 840
7. I.W. Tao, M. Jurkovic, and W.I. Wang Appl. Phys. Lett. 64 1994 1848
8. H. Ogawa, G.S. Irfan, H. Nakayama, M. Nishio, and A. Yoshida Jpn. J. Appl. Phys. 33 1994 L980
9. J.H. Chang, T. Takai, B.H. Koo, J.S. Song, T. Handa, and T. Yao Appl. Phys. Lett. 79 2001 785
10. E. Przeździecka, E. Dynowska, W. Paszkowicz, W. Dobrowolski, H. Kpa, C.F. Majkrzak, T.M. Giebultowicz, E. Janik, and J. Kossut Thin Solid Films 516 2008 4813
11. Q. Guo, Y. Sueyasu, T. Tanaka, M. Nishio, and J. Cao Jpn. J. Appl. Phys. 48 2009 080208
12. A. Erlacher, A.R. Lukaszew, H. Jaeger, and B. Ullrich Surf. Sci. 600 2006 3762
13. S. Sakakibara, Y. Inoue, H. Mimura, K. Ishino, A. Ishida, and H. Fujiyasu Appl. Surf. Sci. 244 2005 343
14. E. Bacaksiz, S. Aksu, N. Ozer, M. Tomakin, and A. Özelik Appl. Surf. Sci. 256 2009 1566
15. Z. Zhu, T. Nomura, M. Miyao, and M. Hagino J. Cryst. Growth 95 1989 529
16. R. Hao, Y. Xu, Z. Zhou, Z. Ren, H. Ni, Z. He, and Z. Niu J. Phys. D 40 2007 1080
17. C.R. Li, B.K. Tanner, D.E. Ashenford, J.H.C. Hogg, and B. Lunn J. Appl. Phys. 82 1997 2281
18. J. Zhao, Y. Zeng, C. Liu, and Y. Li J. Cryst. Growth 312 2010 1491
19. J. Reichow, J. Griesche, N. Hoffmann, C. Muggelberg, H. Rossmann, L. Wilde, F. Henneberger, and K. Jakobs J. Cryst. Growth 131 1993 277
20. D. Wolfframm, D.A. Evans, D.I. Westwood, and J. Riley J. Cryst. Growth 216 2000 119
21. S. Tatarenko, B. Daudin, and D.B.-L. Cunff Appl. Phys. Lett. 66 1995 1773
22. S. Ivanov, S. Sorokin, I. Krestnikov, N. Faleev, B. Ber, I. Sedova, Yu. Kudryavtsev, and P. Kop'ev J. Cryst. Growth 184-185 1998 70
23. Z. Zhu, T. Nomura, M. Miyao, and M. Hagino J. Cryst. Growth 96 1989 513
24. J. Chang, K. Godo, J. Song, D. Oh, C. Lee, and T. Yao J. Cryst. Growth 251 2003 596
25. K. Yasuda, M. Niraula, T. Ishiguro, Y. Kawauchi, H. Morishita, and Y. Agata Jpn. J. Appl. Phys. 41 2002 L1109
26. Y. Kume, Q. Guo, Y. Fukuhara, T. Tanaka, M. Nishio, and H. Ogawa J. Cryst. Growth 298 2007 445