ZnTe-based light-emitting diodes fabricated by solid-state diffusion of Al through Al oxide layer

Japanese Journal of Applied Physics

Volumn 48, Issue 2, 2009, Pages

  Tanaka, Tooru ^a   Nishlo, Mitsuhiro ^a   Guo, Qixin ^a   Ogawa, Hiroshi ^a  

^a SAGA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION IN SOLIDS; FIBER LASERS; LIGHT EMISSION; LIGHT EMITTING DIODES; SEMICONDUCTING ZINC COMPOUNDS;

AL CONCENTRATIONS; AL OXIDES; DIFFUSION DEPTHS; FORWARD CURRENTS; LIGHT EMITTING DIODE LEDS; MAXIMUM OUTPUT POWER; O RADICALS; OUTPUT POWER; OXIDE LAYERS; SELF-ABSORPTION EFFECTS; SOLID-STATE DIFFUSIONS;

ALUMINUM;

EID: 60849131258     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.022203     Document Type: Article

References (5)

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