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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 10 A, 2002, Pages

Growth and characterization of thick (100) CdTe layers on (100) GaAs and (100) GaAs/Si substrates by metalorganic vapor phase epitaxy

(6) Yasuda, Kazuhito a Niraula, Madan a Ishiguro, Tomoaki a Kawauchi, Yasuhiro a Morishita, Hiroshi a Agata, Yasunori a

a NAGOYA INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

CdTe; Epitaxy; Gamma ray detector; MOVPE; Thick layer

Indexed keywords

CHARACTERIZATION; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; GALLIUM COMPOUNDS; GAMMA RAYS; METALLORGANIC VAPOR PHASE EPITAXY; SILICON; SUBSTRATES; THICK FILMS; X RAYS;

GAMMA-RAY DETECTORS;

CADMIUM COMPOUNDS;

EID: 0036815111 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.l1109 Document Type: Article

Times cited : (10)

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