Aluminum-doped n-type ZnTe layers grown by molecular-beam epitaxy

Applied Physics Letters

Volumn 79, Issue 6, 2001, Pages 785-787

  Chang, J H ^a   Takai, T ^a   Koo, B H ^a   Song, J S ^a   Handa, T ^a   Yao, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

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EID: 0039782244     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1390481     Document Type: Article

References (16)

1. J. Gu, K. Tonomura, N. Yoshikawa, and T. Sakaguchi, J. Appl. Phys. 44, 4692 (1973).
2. K. Sato, M. Hanafusa, A. Noda, A. Arakawa, T. Asahi, M. Uchida, and O. Oda, IEICE Trans. Electron. E83-C, 579 (2000).
3. C. Winnewisser, P. U. Jepsen, M. Schall, V. Schiyja, and H. Helm, Appl. Phys. Lett. 70, 3069 (1997).
4. I. W. Tao, M. Jurkovic, and W. I. Wang, Appl. Phys. Lett. 64, 1848 (1994).
5. H. Ogawa, G.S. Irfan, H. Nakayama, M. Nishio, and A. Yoshida, Jpn. J. Appl. Phys., Part 2 33, L980 (1994).
6. J. C. Phillips, Bonds and Bands in Semiconductors (Academic, New York, 1973).
7. R. N. Bhargava, J. Cryst. Growth 59, 15 (1982).
8. J. H. Chang, M. W. Cho, H. M. Wang, H. Wenisch, T. Hanada, K. Sato, O. Oda, and T. Yao, Appl. Phys. Lett. 77, 1256 (2000).
9. T. L. Larson, C. F. Varotto, and D. A. Stevenson, J. Appl. Phys. 43, 172 (1972).
10. J. Bittebierre and R. T. Cox, Phys. Rev. B 34, 2360 (1986).
11. M. Nishio, Q. Guo, and H. Ogawa, Thin Solid Films 343-344, 512 (1999).
12. G. Schmieder, W. Maier, L. Pu-Lin, and C. Klingshirn, J. Lumin. 28, 357 (1983).
13. J. L. Pautrat, J. M. Francou, N. Magnea, E. Molva, and K. Saminadayar, J. Cryst. Growth 72, 194 (1985).
14. H. Venghaus and P. J. Dean, Phys. Rev. B 21, 1596 (1980).
15. J.R. Haynes, Phys. Rev. Lett. 4, 361 (1960).
16. F. Williams, Phys. Status Solidi 25, 493 (1968).