Substrate temperature dependence of ZnTe epilayers grown on GaAs(0 0 1) by molecular beam epitaxy

Journal of Crystal Growth

Volumn 312, Issue 9, 2010, Pages 1491-1495

  Zhao, Jie ^a   Zeng, Yiping ^a   Liu, Chao ^a   Li, Yanbo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Atomic force microscopy; A1. Molecular beam epitaxy; A1. Reflection high energy electron diffraction; B1. Zinc compounds; B2. Semiconducting II VI materials

Indexed keywords

A1. ATOMIC FORCE MICROSCOPY; A1. REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION; B2. SEMICONDUCTING II-VI MATERIALS; BEAM EQUIVALENT PRESSURE; EPILAYERS GROWN; GAAS; GROWTH MODES; HIGHER TEMPERATURES; IN-SITU; ROOT MEAN SQUARE ROUGHNESS; SEMICONDUCTING II-VI MATERIALS; STICKING COEFFICIENTS; SUBSTRATE TEMPERATURE; SUBSTRATE TEMPERATURE DEPENDENCE; THREE-DIMENSIONAL (3D); X RAY ROCKING CURVE; ZNTE THIN FILMS;

ATOMIC FORCE MICROSCOPY; DESORPTION; ELECTRON DIFFRACTION; EPILAYERS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; HIGH ENERGY PHYSICS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; REFLECTION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES; THREE DIMENSIONAL; TWO DIMENSIONAL; ZINC;

ZINC COMPOUNDS;

EID: 77949913117     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.01.032     Document Type: Article

References (17)

1. Chang J.H., Cho M.W., Wang H.M., Wenisch H., Hanada T., Yao T., Sato K., and Oda O. Appl. Phys. Lett. 77 (2000) 1256
2. Tanaka T., Nishio1 M., Guo Q., and Ogawa H. Jpn. J. Appl. Phys. 48 (2009) 022203
3. Wagner H.P., Kühnelt M., Wein G., Hahn B., Gebhardt W., Eisert D., Bacher G., and Forchel A. J. Lumin. 72-74 (1997) 87
4. Turchinovich D., and Dijkhuis J.I. Opt. Commun. 270 (2007) 96
5. Guo Q.X., Kume Y., Fukuhara Y., Tanaka T., Nishio M., Ogawa H., Hiratsuka M., Tani M., and Hangyo M. Solid State Commun. 141 (2007) 188
6. Y.-H. Zhang, S.-Q. Yu, S.R. Johnson, D. Ding, S.-N. Wu, in: Proceedings of the 33rd IEEE Photovoltaic Specialist Conference, 11-16 May 2008.
7. Chang J., Godo K., Song J., Oh D., Lee C., and Yao T. J. Cryst. Growth 251 (2003) 596
8. Lee W., Jung M., Jung M., Lee H., Lee S., Park S., Yao T., Song J., Ko H., and Chang J. J. Cryst. Growth 304 (2007) 22
9. Guo Q., Sueyasu Y., Tanaka T., Nishio M., and Cao J. Jpn. J. Appl. Phys. 48 (2009) 080208
10. Traversa M., Lovergine N., Prete P., Yoshino K., Di Luccio T., Scalia G., Pentimalli M., Tapfer L., Morales P., and Mancini A.M. J. Appl. Phys. 96 (2004) 1230
11. Rao G.K., Bangera K.V., and Shivakumar G.K. Vacuum 83 (2009) 1485
12. Guo Q., Sueyasu Y., Ding Y., Tanaka T., and Nishio M. J. Cryst. Growth 311 (2009) 970
13. Li C.R., Tanner B.K., Ashenford D.E., Hogg J.H.C., and Lunn B. J. Appl. Phys. 82 (1997) 2281
14. Reichow J., Griesche J., Hoffmann N., Muggelberg C., Rossmann H., Wilde L., Henneberger F., and Jakobs K. J. Cryst. Growth 131 (1993) 277
15. Wolfframm D., Evans D.A., Westwood D.I., and Riley J. J. Cryst. Growth 216 (2000) 119
16. Riley J., Wolfframm D., Westwood D., and Evans A. J. Cryst. Growth 160 (1996) 193
17. Ivanov S., Sorokin S., Krestnikov I., Faleev N., Ber B., Sedova I., Kudryavtsev Yu., and Kop'ev P. J. Cryst. Growth 184-185 (1998) 70