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Volumn 518, Issue 17, 2010, Pages 4768-4772
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Ultra low dielectric constant polysilsesquioxane films using T 8(Me4NO)8 as porogen
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Author keywords
Atomic force microscopy; Double effective porogen; Polyhedral oligomeric silsesquioxanes; Polymethylsilsesquioxane; Thermogravimetry; Ultra low dielectric constant
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Indexed keywords
POLYHEDRAL OLIGOMERIC SILSESQUIOXANES;
POLYMETHYLSILSESQUIOXANE;
POROGENS;
THERMOGRAVIMETRY;
ULTRA-LOW DIELECTRIC CONSTANT;
ATOMIC FORCE MICROSCOPY;
COATINGS;
PERMITTIVITY;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON WAFERS;
THERMOGRAVIMETRIC ANALYSIS;
FILM PREPARATION;
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EID: 77955655251
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2010.01.020 Document Type: Article |
Times cited : (28)
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References (26)
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