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Volumn 518, Issue 17, 2010, Pages 4768-4772

Ultra low dielectric constant polysilsesquioxane films using T 8(Me4NO)8 as porogen

Author keywords

Atomic force microscopy; Double effective porogen; Polyhedral oligomeric silsesquioxanes; Polymethylsilsesquioxane; Thermogravimetry; Ultra low dielectric constant

Indexed keywords

POLYHEDRAL OLIGOMERIC SILSESQUIOXANES; POLYMETHYLSILSESQUIOXANE; POROGENS; THERMOGRAVIMETRY; ULTRA-LOW DIELECTRIC CONSTANT;

EID: 77955655251     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.01.020     Document Type: Article
Times cited : (28)

References (26)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.