Fabricating gate insulator by low temperature solution-based process

Thin Solid Films

Volumn 517, Issue 14, 2009, Pages 4135-4137

  Kim, Si Joon ^a   Kim, Dong Lim ^a   Kim, Hyun Jae ^a  

^a Yonsei University   (South Korea)

Author keywords

Low temperature solution based process; Photo oxidation; PMPS SOG; SiO2

Indexed keywords

CAPACITANCE VOLTAGES; DIELECTRIC CONSTANTS; ELECTRICAL CHARACTERISTICS; FOURIER TRANSFORM INFRARED SPECTRUM; GATE INSULATORS; LEAKAGE CURRENT MEASUREMENTS; LIQUID PRECURSORS; LOW TEMPERATURE SOLUTION-BASED PROCESS; LOW TEMPERATURES; PEAK INTENSITIES; PHOTO OXIDATION; PMPS-SOG; SI-O-SI BONDS; SIO2; SOLUTION-PROCESSED; SPIN-ON GLASS; ULTRA VIOLETS; UV ENERGIES;

ELECTRIC CURRENT MEASUREMENT; INFRARED SPECTROSCOPY; OXIDATION; POLYSILANES; SPIN DYNAMICS; SPIN GLASS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 65449133095     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.02.002     Document Type: Article

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