Optical and electrical properties of thermally evaporated In49Se48Sn3 films

Physica B: Condensed Matter

Volumn 404, Issue 16, 2009, Pages 2425-2430

  Salem, A M ^a   El Gendy, Y A ^b   El Sayad, E A ^a  

^a NATIONAL RESEARCH CENTRE   (Egypt)

^b HELWAN UNIVERSITY   (Egypt)

Author keywords

Amorphous to crystalline In49Se48Sn3 films; Electrical properties; Optical properties; Semiconductors

Indexed keywords

AMORPHOUS-TO-CRYSTALLINE IN49SE48SN3 FILMS; ANNEALED FILMS; AS-DEPOSITED FILMS; COOLING CYCLE; CRYSTALLINE FILMS; DEPOSITED FILMS; DIRECT ENERGY GAPS; ELECTRICAL PROPERTIES; ELECTRICAL RESISTANCES; GLASS SUBSTRATES; IV CHARACTERISTICS; METAL ELECTRODES; MICRO-STRUCTURAL; NONOHMIC BEHAVIOR; OHMIC BEHAVIOR; OPTICAL ABSORPTION SPECTRUM; OPTICAL AND ELECTRICAL PROPERTIES; REFLECTANCE DATA; ROOM TEMPERATURE; SEMICONDUCTORS; SPACE CHARGE LIMITED CONDUCTION; SPECTRAL RANGE; STRAIGHT LINES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE;

CRYSTALLINE MATERIALS; DIAMOND FILMS; ELECTRIC PROPERTIES; ELECTRODES; ENERGY GAP; LIGHT ABSORPTION; OPTICAL PROPERTIES; ORGANIC POLYMERS; SEMICONDUCTING SELENIUM COMPOUNDS; SILVER; SOLIDS; THERMAL EVAPORATION; TIN; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS FILMS;

EID: 67650141943     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.05.005     Document Type: Article

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