SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 87, Issue 11, 2010, Pages 2338-2342

Ta/Si Schottky diodes fabricated by magnetron sputtering technique

(3) Ocak, Y S a Genisel, M F b Kilicoglu T a,c

a DICLE UNIVERSITY (Turkey)

b BILKENT UNIVERSITY (Turkey)

c BATMAN UNIVERSITY (Turkey)

Author keywords

Barrier height; Schottky diodes; Series resistance; Sputtering; Tantalum

Indexed keywords

BAND GAPS; BARRIER HEIGHTS; CAPACITANCE VOLTAGE MEASUREMENTS; CHARACTERISTIC PARAMETER; CURRENT VOLTAGE; ELECTRICAL PROPERTY; I-V MEASUREMENTS; IDEALITY FACTORS; INHOMOGENEITIES; INTERFACE STATE; NATIVE OXIDE LAYER; SCHOTTKY DIODES; SERIES RESISTANCE; SERIES RESISTANCES;

ELECTRIC PROPERTIES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; TANTALUM;

SCHOTTKY BARRIER DIODES;

EID: 77955509362 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2010.04.003 Document Type: Article

Times cited : (24)

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