Electrical characterization of defects introduced during sputter deposition of schottky contacts on n-type Ge

Journal of Electronic Materials

Volumn 36, Issue 12, 2007, Pages 1604-1607

  Auret, F D ^a   Coelho, S ^a   Meyer, W E ^a   Nyamhere, C ^a   Hayes, M ^a   Nel, J M ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

Deep level transient spectroscopy (DLTS); Defects; Germanium; Schottky contacts; Sputter deposition

Indexed keywords

HIGH ENERGY ELECTRON IRRADIATION; SCHOTTKY CONTACTS;

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CONTACTS; ELECTRON IRRADIATION; ELECTRON TRAPS; GERMANIUM; GOLD; SPUTTER DEPOSITION;

DEFECTS;

EID: 36148943505     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-007-0245-y     Document Type: Article

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