Nucleation and growth of 3C-SiC single crystals from the vapor phase

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 31-36

  Chaussende, D ^a   Eid, J ^a   Mercier, F ^a   Madar, R ^a   Pons, M ^b  

^a LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

^b GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

3C SiC; Bulk growth; Nucleation; PVT; Sublimation

Indexed keywords

METAL CASTINGS; NUCLEATION; SINGLE CRYSTALS; SUBLIMATION;

3C-SIC; BULK GROWTH; GROWTH PROCESS; NUCLEATION AND GROWTH; SIC SEEDS; SIC SINGLE CRYSTALS; STRUCTURAL QUALITIES; VAPOR PHASE;

SILICON CARBIDE;

EID: 77955465727     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.31     Document Type: Conference Paper

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