Temperature induced polytype conversion in cubic silicon carbide studied by Raman spectroscopy

Journal of Applied Physics

Volumn 96, Issue 10, 2004, Pages 5569-5575

  Pusche R ^a   Hundhausen, M ^a   Ley, L ^a   Semmelroth, K ^a   Schmid, F ^a   Pensl, G ^a   Nagasawa, H ^b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b HOYA Advanced Semiconductor Technologies Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CRYSTAL STRUCTURE; CRYSTALLIZATION; CRYSTALLOGRAPHY; EPITAXIAL GROWTH; OPTICAL MICROSCOPY; RAMAN SPECTROSCOPY; THERMAL EXPANSION;

MICROSCOPIC IMAGES; PHYSICAL VAPOR TRANSPORT (PVT); POLYTYPE CONVERSIONS; TEMPERATURE TREATMENT;

SILICON CARBIDE;

EID: 10044259983     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1803924     Document Type: Article

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