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Volumn 6, Issue 12, 2009, Pages 2621-2625

Crystal growth and p-type conductivity control of AlGaN for high-efficiency nitride-based UV emitters

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALN; ALN-LAYER GROWN; COMPOSITIONAL DEPENDENCE; HIGH EFFICIENCY; METAL-ORGANIC VAPOR PHASE EPITAXY; MG CONCENTRATIONS; MICROSTRUCTURAL ANALYSIS; MOLAR FRACTIONS; ONE-THIRD POWER LAW; P-TYPE CONDUCTIVITY; THREADING DISLOCATION DENSITIES; UV-EMITTER;

EID: 77955452236     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982547     Document Type: Conference Paper
Times cited : (19)

References (20)
  • 13
    • 10044264705 scopus 로고    scopus 로고
    • An INSPEC publication, J. W. Orton and C. T. Foxon
    • emis Data review series No. 23, An INSPEC publication, J. W. Orton and C. T. Foxon (1999).
    • (1999) Emis Data Review Series No. 23


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.