Germanium on glass: A novel platform for light-sensing devices

IEEE Photonics Journal

Volumn 2, Issue 5, 2010, Pages 686-695

  Colace, L ^a   Sorianello, V ^a   Assanto, G ^a   Fulgoni, D ^b   Nash, L ^b   Palmer, M ^b  

^a ROMA TRE UNIVERSITY   (Italy)

^b Barclays   (United Kingdom)

Author keywords

Germanium; photodetectors; solar energy; wafer bonding

Indexed keywords

CRYSTALLINE GE; EPITAXIAL REGROWTH; FILL FACTOR; LAYER TRANSFER; MAXIMUM SENSITIVITY; NEAR INFRARED LIGHT; P-N JUNCTION; REVERSE VOLTAGES; SENSING DEVICES;

CONVERSION EFFICIENCY; GERMANIUM; GLASS; GLASS BONDING; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTOR JUNCTIONS; SENSORS; SILICON WAFERS; SOLAR CELLS; SOLAR ENERGY; SOLAR RADIATION;

WAFER BONDING;

EID: 77955449029     PISSN: 19430655     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOT.2010.2059374     Document Type: Article

References (30)

1. R. A. Soref, "Silicon-based optoelectronics" Proc. IEEE, vol. 81, no. 12, pp. 1687-1706, Dec. 1993.
2. G. Masini, L. Colace, and G. Assanto, "Si-based optoelectronics for communications" Mater. Sci. Eng. B, vol. 89, no. 1-3, pp. 2-9, Feb. 2002.
3. C. O. Chui and K. C. Saraswat "Advanced germanium MOS deices and technology" in Proc. IEEE Conf. Electron Devices, Solid State Circuits, Dec. 2005, pp. 101-106.
4. J. Fernandez, S. Janz, D. Suwito, E. Oliva, and F. Dimroth"Advanced concepts for high-efficiency germanium photovoltaic cells" in Proc. 33rd IEEE Photon. Spec. Conf., May 2008, pp. 1-4.
5. S. J. Koester, J. D. Schaub, G. Dehlinge, and J. O. Chu"Germanium- on-SOI infrared detectors for integrated photonics applications" IEEE J. Sel. Topics Quantum Electron., vol. 12, no. 6, pp. 1489-1502, Nov. 2006.
6. D. C. Law, R. R. King, H. Yoon, M. J. Archer, A. Boca, C. M. Fetzer, S. Mesropian, T. Isshiki, M. Haddad, K. M. Edmondson, D. Bushari, J. Yen, R. A. Sherif, H. A. Atwater, and N. H. Karam"Future technology pathways of terrestrial III-V multijunction solar cells for concentrator photovoltaic systems" Sol. Energy Mater. Sol. Cells, vol. 94, no. 8, pp. 1314-1318, Aug. 2010.
7. R. R. King, D. C. Law, K. M. Edmondson, C. M. Fetzer, G. S. Kinsey, H. Yoon, R. A. Sherif, and N. H. Karam"40% efficient metamorphic GaInP/GaInAs/Ge multijunction solar cells" Appl. Phys. Lett., vol. 90, no. 18, pp. 183 516-183 519, Apr. 2007.
8. T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia"31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate" Opt. Express, vol. 15, no. 21, pp. 13 965-13 971, Oct. 2007.
9. Y. Kang, M. Morse, H. Liu, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y. Kuo, H. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, "Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product" Nat. Photon., vol. 3, no. 1, pp. 59-63, Dec. 2008.
10. M. Berroth, M. Kaschel, E. Kasper, S. Klinger, and M. Oheme, "Ge on Si p-i-n photodiodes with a 3 dB bandwidth of 49 GHz" IEEE Photon. Technol. Lett., vol. 21, no. 13, pp. 920-922, Jul. 2009.
11. G. Masini, L. Colace, G. Assanto, H. C. Luan, K. Wada, and L. C. Kimerling, "High performance p-i-n Ge on Si photodetectors for the near infrared: From model to demonstration" IEEE Trans. Electron Devices, vol. 48, no. 6, pp. 1092-1096, Jun. 2001.
12. L. Colace, M. Balbi, G. Masini, G. Assanto, H. C. Luan, and L. C. Kimerling, "Ge on Si p-i-n photodiodes operating at 10 Gb/s" Appl. Phys. Lett., vol. 88, no. 10, pp. 101 111-101 113, Mar. 2006.
13. G. Masini, G. Capellini, J. Witzen, and C. Gunn, "A 1550 nm 10 Gb/s monolithic optical receiver in 130 nm CMOS with integrated Ge waveguide photodetector" in Proc. IEEE Int. Conf. Group IV Photon., Sep. 2007, pp. 1-3.
14. G. Masini, V. Cencelli, L. Colace, F. D. Notaristefani, and G. Assanto, "Monolithic integration of near-infrared Ge photodetectors with Si complementary metal-oxide-semiconductor readout electronics" Appl. Phys. Lett., vol. 80, no. 18, pp. 3268-3270, May 2002.
15. G. Masini, V. Cencelli, L. Colace, F. DeNotaristefani, and G. Assanto, "Linear array of Si/Ge heterojunction photodetectors monolithically integrated with silicon CMOS readout electronics" IEEE J. Sel. Topics Quantum Electron., vol. 10, no. 4, pp. 811-815, Jul. 2004.
16. L. Colace, G. Masini, G. Assanto, F. Denotaristefani, and V. Cencelli, "Near-infrared camera in polycrystalline Germanium integrated on complementary metal-oxide-semiconductor electronics" Appl. Phys. Lett., vol. 90, no. 1, pp. 11 103-11 105, Jan. 2007.
17. L. M. Giovane, H. C. Luan, A. M. Agarwal, and L. C. Kimerling, "Correlation between leakage current density and threading dislocation density in SiGe p-i-n diodes grown on relaxed graded buffer layers" Appl. Phys. Lett., vol. 78, no. 4, pp. 541-543, Jan. 2001.
18. T. Tezuka, N. Sugiyama, Y. Mizuno, and S. Takagi, "Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction" Appl. Phys. Lett., vol. 79, no. 12, pp. 1798-1800, Sep. 2001. (Pubitemid 33596906)
19. S. Nakaharai, T. Tezuka, N. Sugiyama, Y. Moriyama, and S. Takagi, "Characterization of 7-nm-thick strained Ge-oninsulator layer fabricated by Ge-condensation technique" Appl. Phys. Lett., vol. 83, no. 17, pp. 3516-3519, Oct. 2003.
20. Q. T. Nguyen, J. F. Damlencourt, B. Vincent, L. Clavelier, Y. Morand, P. Gentil, and S. Cristoloveanu, "High quality germanium-on-insulator wafers with excellent hole mobility" Solid-State Electron., vol. 51, no. 9, pp. 1172-1179, Sep. 2007.
21. Y. Liu, M. D. Deal, and J. D. Plummer, "High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates" Appl. Phys. Lett., vol. 84, no. 14, pp. 2563-2566, Apr. 2004.
22. F. Letertre, C. Deguet, C. Richtarch, B. Faure, J. M. Hartmann, F. Chieu, A. Beaumont, J. Dechamp, C. Morales, F. Allibert, P. Perreau, S. Pocas, S. Personnic, C. Lagahe-Blanchard, B. Ghyselen, Y. M. Le Vaillant, E. Jalaguier, N. Kernevez, and C. Mazure, "Germanium-on-insulator (GeOI) structure realized by the smart-cut technology" in Proc. Mater. Res. Soc. Symp., Apr. 2004, pp. 153-158. (Pubitemid 40157441)
23. C. Y. Yu, C. Y. Lee, C. H. Lin, and C. W. Liu, "Low-temperature fabrication and characterization of Ge-on-insulator structures" Appl. Phys. Lett., vol. 89, no. 10, p. 101 913, Sep. 2006.
24. L. Colace, G. Masini, G. Assanto, F. Galluzzi, G. Capellini, L. DiGaspare, E. Palange, and F. Evangelisti, "Metal-semiconductor-metal near-infrared light detector based on epitaxial Ge/Si" Appl. Phys. Lett., vol. 72, no. 24, pp. 3175-3177, Jun. 1998.
25. Y. Chao, R. Scholz, M. Reiche, U. Gösele, and J. C. Woo, "Characteristics of germanium-on-insulators fabricated by wafer bonding and hydrogen-induced layer splitting" Jpn. J. Appl. Phys., vol. 45, no. 11, pp. 8565-8570, Nov. 2006. (Pubitemid 47253102)
26. H. S. Min, Y. C. Joo, and O. S. Song, "Effects of wafer cleaning and annealing on glass/silicon wafer direct bonding" J. Electron. Packag., vol. 126, no. 1, pp. 120-123, Mar. 2004.
27. V. Sorianello, A. De Iacovo, L. Colace, G. Assanto, D. Fulgoni, L. Nash, and M. Palmer, "Germanium on insulator nearinfrared photodetectors fabricated by layer transfer" Thin Solid Films, vol. 518, no. 9, pp. 2501-2504, Feb. 2009.
28. L. Colace, P. Ferrara, G. Assanto, D. Fulgoni, and L. Nash, "Low dark-current germanium on silicon near-infrared detectors" IEEE Photon. Technol. Lett. 19, no. 22, pp. 1813-1815, Nov. 2007.
29. N. E. Posthuma, G. Flamand, and J. Poortmans, "Development of stand-alone germanium solar cells for application in space using spin-on diffusant" in Proc. 3rd World Conf. Photovol. Energy Conv., Osaka, Japan, Jun. 2003, pp. 777-779.
30. N. E. Posthuma, J. Van der Heide, G. Flamand, and J. Poortmans, "Emitter formation and contact realization by diffusion for Germanium photovoltaic devices" IEEE Trans. Electron Devices, vol. 54, no. 5, pp. 1210-1215, May 2007.