On the viability of Au/3C-SiC Schottky barrier diodes

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 677-680

  Eriksson, Jens ^a,b   Weng, Ming Hung ^a   Roccaforte, Fabrizio ^a   Giannazzo, Filippo ^a   Di Franco, Salvatore ^a   Leone, Stefano ^c   Raineri, Vito ^a  

^a CNR IMM   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

^c LINKÖPING UNIVERSITY   (Sweden)

Author keywords

3C SiC; Defects; Passivation; Schottky diodes

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; DEFECTS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; IRRADIATION; MAPPING; PASSIVATION; SEMICONDUCTOR DIODES; SILICON CARBIDE; WIDE BAND GAP SEMICONDUCTORS;

3C-SIC; CONDUCTIVE ATOMIC FORCE MICROSCOPY; CURRENT-VOLTAGE MEASUREMENTS; ELECTRICAL CHARACTERISTIC; ELECTRICALLY ACTIVE DEFECTS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODES; ULTRAVIOLET IRRADIATIONS;

SCHOTTKY BARRIER DIODES;

EID: 77955441198     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.677     Document Type: Conference Paper

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