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Volumn 6, Issue 12, 2009, Pages 2644-2648

Hydrogen-induced defect engineering in dilute nitride semiconductors

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC STRAIN; CRYSTAL BAND; DILUTE NITRIDES; ELECTRONIC ACTIVITY; ELECTRONIC AND STRUCTURAL PROPERTIES; HYDROGEN IRRADIATION; IN-PLANE; IN-PLANE POLARIZATION; INDUCED DEFECTS; MAIN CHARACTERISTICS; METALLIC MASKS; QUANTUM CONFINEMENT EFFECTS;

EID: 77955440219     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982554     Document Type: Conference Paper
Times cited : (2)

References (33)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.