An atomic force microscopy and optical microscopy study of various shaped void formation and reduction in 3C-SiC films grown on Si using chemical vapor deposition

Thin Solid Films

Volumn 516, Issue 8, 2008, Pages 1669-1676

  Gupta, A ^a   Sengupta, J ^a   Jacob, C ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

3C SiC; AFM; CVD; HMDS; Void

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; INTERFACIAL ENERGY; OPTICAL MICROSCOPY; PARAMETER ESTIMATION;

RESISTANCE-HEATED CHEMICAL; SI SUBSTRATE; SUITABLE GROWTH TECHNIQUE;

SILICON;

EID: 38649140704     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.05.007     Document Type: Article

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