SiC voids, mosaic microstructure and dislocations distribution in Si carbonized layers

Diamond and Related Materials

Volumn 12, Issue 3-7, 2003, Pages 1227-1230

  Morales, F M ^a   Molina, S I ^a   Araujo D ^a   Garcia R ^a   Cimalla, V ^b   Pezoldt, J ^b  

^a UNIVERSITY OF CÁDIZ   (Spain)

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

High resolution transmission electron microscopy (HRTEM); Rapid thermal chemical vapor deposition (RTCVD); Si carbonization; Silicon carbide (3C SiC)

Indexed keywords

ANNEALING; CARBONIZATION; CRYSTAL MICROSTRUCTURE; DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; HIGH RESOLUTION ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

INTERFACIAL QUALITY;

DIAMONDS;

DIAMOND;

EID: 0037514589     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(02)00300-X     Document Type: Article

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