Growth of 3C-SiC on Si(100) by low pressure chemical vapor deposition using a modified four-step process

Crystal Growth and Design

Volumn 9, Issue 6, 2009, Pages 2616-2619

  Chen, W Y ^a   Chen, C C ^a   Hwang, J ^a,b   Huang, C F ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NONE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 66849138111     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg801041w     Document Type: Article

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