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Journal of Materials Research

Volumn 13, Issue 12, 1998, Pages 3571-3579

A transmission electron microscopy investigation of SiC films grown on Si(111) substrates by solid-source molecular beam epitaxy

(6) Kaiser, U a Newcomb, S B b Stobbs, W M b Adamik, M c Fissel, A a Richter, W a

a FRIEDRICH SCHILLER UNIVERSITY JENA (Germany)

b UNIVERSITY OF CAMBRIDGE (United Kingdom)

c RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001757382 PISSN: 08842914 EISSN: None Source Type: Journal
DOI: 10.1557/JMR.1998.0486 Document Type: Article

Times cited : (10)

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