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Volumn 253, Issue 1-4, 2003, Pages 95-101
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Study of surface defects on 3C-SiC films grown on Si(1 1 1) by CVD
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Author keywords
A1. X ray diffraction; A3. Vapor phase epitaxy; B1. Silicon carbide
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CHEMICAL VAPOR DEPOSITION;
FILM GROWTH;
MORPHOLOGY;
SILICON;
SILICON CARBIDE;
SUBSTRATES;
X RAY DIFFRACTION ANALYSIS;
SURFACE DEFECTS;
THIN FILMS;
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EID: 18844473608
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(03)01024-8 Document Type: Article |
Times cited : (31)
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References (15)
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