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Volumn 253, Issue 1-4, 2003, Pages 95-101

Study of surface defects on 3C-SiC films grown on Si(1 1 1) by CVD

Author keywords

A1. X ray diffraction; A3. Vapor phase epitaxy; B1. Silicon carbide

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; MORPHOLOGY; SILICON; SILICON CARBIDE; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

EID: 18844473608     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01024-8     Document Type: Article
Times cited : (31)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.