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Volumn 518, Issue 6, 2010, Pages 1747-1750
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Electrical and structural characterizations of non-polar AlGaN/GaN heterostructures
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Author keywords
Gallium nitride; Metal organic chemical vapor deposition; Non polar structure; Scanning electron microscopy; Schottky contact; X ray diffraction
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Indexed keywords
A-PLANE;
ALGAN/GAN;
ALGAN/GAN HETEROSTRUCTURES;
BARRIER HEIGHTS;
DIFFERENT MECHANISMS;
ENHANCEMENT-MODE;
FABRICATION PROCESS;
HIGH QUALITY;
HIGH VOLTAGE DEVICES;
IDEALITY FACTORS;
METAL-ORGANIC CHEMICAL VAPOR DEPOSITION;
MODE OPERATION;
NON-POLAR;
NON-POLAR GAN;
NON-POLAR STRUCTURE;
NON-TRIVIAL;
PLANE SAPPHIRE;
SCANNING ELECTRONS;
SCHOTTKY CONTACTS;
SCHOTTKY GATE;
STRUCTURAL CHARACTERIZATION;
TWO-STEP NUCLEATION;
WET-ETCH;
DIFFRACTION;
GALLIUM ALLOYS;
INDUSTRIAL CHEMICALS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
ORGANIC CHEMICALS;
PLATINUM;
POTASSIUM HYDROXIDE;
SCANNING ELECTRON MICROSCOPY;
WET ETCHING;
X RAY DIFFRACTION;
GALLIUM NITRIDE;
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EID: 73449148732
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2009.11.069 Document Type: Letter |
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Times cited : (9)
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References (14)
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