Growth of an ordered crystalline organic heterojunction

Advanced Materials

Volumn 19, Issue 23, 2007, Pages 4229-4233

  Lunt, Richard R ^a,b   Benziger, Jay B ^b   Forrest, Stephen R ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; HETEROJUNCTIONS; SPECTROSCOPIC ELLIPSOMETRY; SUBSTRATES; THICK FILMS; X RAY DIFFRACTION;

BRAGG-BRENTANO CONFIGURATION; LONG RANGE FILMS; ORGANIC VAPOR PHASE DEPOSITION (OVPD); VARIABLE-ANGLE SPECTROSCOPIC ELLIPSOMETERY;

CRYSTAL GROWTH;

EID: 37149031876     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200701572     Document Type: Article

References (27)

1. S. R. Forrest, Nature 2004, 428, 911.
2. V. Podzorov, E. Menard, A. Borissov, V. Kiryukhin, J. A. Rogers, M. E. Gershenson, Phys. Rev. Lett. 2004, 93.
3. H. Moon, R. Zeis, E. J. Borkent, C. Besnard, A. J. Lovinger, T. Siegrist, C. Kloc, Z. N. Bao, J. Am. Chem. Soc. 2004, 126, 15322.
4. R. Zeis, C. Besnard, T. Siegrist, C. Schiockermann, X. L. Chi, C. Kloc, Chem. Mater. 2006, 18, 244.
5. A. L. Briseno, S. C. B. Mannsfeld, M. M. Ling, S. H. Liu, R. J. Tseng, C. Reese, M. E. Roberts, Y. Yang, F. Wudl, Z. N. Bao, Nature 2006, 444, 913.
6. S. R. Forrest, Chem. Rev. 1997, 97, 1793.
7. G. Witte, C. Woll, J. Mater. Res. 2004, 19, 1889.
8. A number of terms including incommensurate epitaxy, point-on-line epitaxy, coincident epitaxy, and quasi-epitaxy have been used to describe ordered organic film growth, where the relationship between the substrate and incommensurate adlayer lattices involves rotational relationships determined by energetic minima in the soft van der Waals interactions. Here, quasi-epitaxy will be used to describe growth lacking short-range commensurability that exhibits a distinct orientational alignment between substrate and film lattices, (see ref. [6]).
9. L. Kilian, E. Umbach, M. Sokolowski, Surf. Sci. 2004, 573, 359.
10. J. Y. Grand, T. Kunstmann, D. Hoffmann, A. Haas, M. Dietsche, J. Seifritz, R. Moller, Surf. Sci. 1996, 366, 403.
11. T. Schmitz-Hubsch, T. Fritz, F. Sellam, R. Staub, K. Leo, Phys. Rev. B 1997, 55, 7972.
12. S. R. Forrest, P. E. Burrows, E. I. Haskal, F. F. So, Phys. Rev. B 1994, 49, 11309.
13. D. E. Hooks, T. Fritz, M. D. Ward, Adv. Mater. 2001, 13, 227.
14. C. Ludwig, R. Strohmaier, J. Petersen, B. Gompf, W. Eisenmenger, J. Vac. Sci. Technol. B 1994, 12, 1963.
15. M. Ashida, Bull. Chem. Soc. Jpn. 1966, 39, 2632.
16. A. Hoshino, Y. Takenaka, M. Izukashi, H. Yoshida, H. Miyaji, Jpn. J. Appl. Phys. Part 1 2004, 43, 4344.
17. M. Mobus, N. Karl, T. Kobayashi, J. Cryst. Growth 1992, 116, 495.
18. T. Schmitz-Hubsch, F. Sellam, R. Staub, M. Torker, T. Fritz, C. Kubel, K. Mullen, K. Leo, Surf. Sci. 2000, 445, 358.
19. M. L. Anderson, V. S. Williams, T. J. Schuerlein, G. E. Collins, C. D. England, L. K. Chau, P. A. Lee, K. W. Nebesny, N. R. Armstrong, Surf. Sci. 1994, 309, 551.
20. M. Gabriel, M. Stohr, R. Moller, Appl. Phys. A 2002, 74, 303.
21. T. Kunstmann, A. Schlarb, M. Fendrich, T. Wagner, R. Moller, R. Hoffmann, Phys. Rev. B 2005, 71.
22. J. A. Last, A. C. Hillier, D. E. Hooks, J. B. Maxson, M. D. Ward, Chem. Mater. 1998, 10, 422.
23. L. Nony, R. Bennewitz, O. Pfeiffer, E. Gnecco, A. Baratoff, E. Meyer, T. Eguchi, A. Gourdon, C. Joachim, Nanotechnology 2004, 15, S91.
24. R. R. Lunt, J. B. Benziger, S. R. Forrest, Appl. Phys. Lett. 2007, 90, 181932.
25. M. Eremtchenko, J. A. Schaefer, F. S. Tautz, Nature 2003, 425, 602.
26. M. Shtein, H. F. Gossenberger, J. B. Benziger, S. R. Forrest, J. Appl. Phys. 2001, 89, 1470.
27. M. Baldo, M. Deutsch, P. Burrows, H. Gossenberger, M. Gerstenberg, V. Ban, S. Forrest, Adv. Mater. 1998, 10, 1505.