Fabrication of sub-10nm metallic lines of low line-width roughness by hydrogen reduction of patterned metal-organic materials

Advanced Functional Materials

Volumn 20, Issue 14, 2010, Pages 2317-2323

  Nedelcu, Mihaela ^c,f   Saifullah, Mohammad S M ^a   Hasko, David G ^d   Jang, Arang ^b   Anderson, David ^c,g   Huck, Wilhelm T S ^d   Jones, Geraint A C ^c   Weiland, Mark E ^d   Kang, Dae Joon ^b   Steiner, Ullrich ^c,d,e  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b Sungkyunkwan University   (South Korea)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^e UNIVERSITY OF FREIBURG   (Germany)

^f UNIVERSITY OF MUNICH   (Germany)

^g UNIVERSITY OF EXETER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITED METAL; DEVICE CHARACTERISTICS; GRAIN SIZE; HYDROGEN REDUCTION; INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS; LENGTH SCALE; LIFTOFF TECHNIQUE; LINEWIDTH ROUGHNESS; LITHOGRAPHIC RESOLUTION; LOW TEMPERATURES; METAL FILM; METAL LINE; METAL ORGANIC COMPOUND; METAL-ORGANIC; METALLIC LINES; NANOLINES; NEW APPROACHES; NICKEL WIRES;

COBALT; COBALT COMPOUNDS; FABRICATION; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HYDROGEN; MOLYBDENUM; NICKEL; NICKEL ALLOYS; ROUGHNESS MEASUREMENT; TUNGSTEN; TUNGSTEN COMPOUNDS;

METALS;

EID: 77955369906     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201000219     Document Type: Article

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