Temperature effects on the characteristics of hydrogen ion-sensitive field-effect transistors with sol-gel-derived lead titanate gates

Analytica Chimica Acta

Volumn 516, Issue 1-2, 2004, Pages 43-48

  Chen, Ying Chung ^a   Jan, Shiun Sheng ^b   Chou, Jung Chuan ^c  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b LING TUNG UNIVERSITY   (Taiwan)

^c NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

ISFET; Isothermal point; PbTiO3; pH response; Temperature coefficient

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON MOBILITY; LEAD COMPOUNDS; SOL-GELS; THERMAL EFFECTS;

ION-SENSITIVE FIELD-EFFECT TRANSISTORS (ISFET); SATURATION REGIONS; TEMPERATURE COEFFICIENTS;

FIELD EFFECT TRANSISTORS;

LEAD TITANATE; PROTON; TITANIUM DERIVATIVE; UNCLASSIFIED DRUG;

ARTICLE; ELECTRIC POTENTIAL; ELECTRON; GEL; HIGH TEMPERATURE; ISOTHERM; PH; PRIORITY JOURNAL; SEMICONDUCTOR; TEMPERATURE SENSITIVITY;

EID: 3042659108     PISSN: 00032670     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.aca.2004.03.078     Document Type: Article

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