Structural and electrical properties of Pb(Zr,Ti)O3 films grown by molecular beam epitaxy

Applied Physics Letters

Volumn 91, Issue 18, 2007, Pages

  Izyumskaya, N ^a   Avrutin, V ^a   Gu, X ^a   Xiao, B ^a   Chevtchenko, S ^a   Yoon, J G ^a,c   Morko H ^a   Zhou, Lin ^b   Smith, David J ^b  

^a Virginia Commonwealth University   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c Suwon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; ELECTRONIC PROPERTIES; FILM GROWTH; LEAD COMPOUNDS; MOLECULAR BEAM EPITAXY; REMANENCE;

ANGULAR BROADENING; CRYSTALLINITY; PB (ZR,TI) O3 FILMS; ROCKING CURVES; SRTI O3 SUBSTRATES;

THIN FILMS;

EID: 35648977541     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2804571     Document Type: Article

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