메뉴 건너뛰기




Volumn 42, Issue 9, 2010, Pages 2157-2177

Two-dimensional electron gas with spinorbit coupling disorder

Author keywords

Quantum wells; Spin relaxation; Two dimensional electron gas

Indexed keywords

EXTERNAL ELECTRIC FIELD; MEMORY EFFECTS; MULTIPLE QUANTUM WELLS; PHYSICAL PROCESS; QUANTUM DOT; QUANTUM WELL; SEMICONDUCTOR STRUCTURE; SINGLE LAYER; SPIN CURRENT INJECTION; SPIN MANIPULATION; SPIN RELAXATION; SPIN-ORBIT COUPLINGS; STATIC DISORDER; TIME-DEPENDENT;

EID: 77955307142     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2010.04.021     Document Type: Review
Times cited : (117)

References (187)
  • 9
    • 77955307241 scopus 로고    scopus 로고
    • arXiv:1001.0606, in press, doi:10.1016/j.physrep.2010.04.002
    • M.W. Wu, J.H. Jiang, M.Q. Weng, Physics Reports, arXiv:1001.0606, in press, doi:10.1016/j.physrep.2010.04.002.
    • Physics Reports
    • Wu, M.W.1    Jiang, J.H.2    Weng, M.Q.3
  • 26
    • 0004124941 scopus 로고
    • E.I. Rashba, V.I. Sheka, in: G. Landwehr, E.I. Rashba (Eds.) North-Holland, Amsterdam and references therein
    • E.I. Rashba, V.I. Sheka, in: G. Landwehr, E.I. Rashba (Eds.), Landau Level Spectroscopy, North-Holland, Amsterdam, 1991, p. 131 and references therein.
    • (1991) Landau Level Spectroscopy , pp. 131
  • 80
    • 84879033490 scopus 로고    scopus 로고
    • J.L. Truitt, K.A. Slinker, K.L.M. Lewis, D.E. Savage, C. Tahan, L.J. Klein, R. Joynt, M.G. Lagally, D.W. van der Weide, S.N. Coppersmith, M.A. Eriksson, A.M. Tyryshkin, J.O. Chu, P.M. Mooney, preprint cond-mat/0411735
    • J.L. Truitt, K.A. Slinker, K.L.M. Lewis, D.E. Savage, C. Tahan, L.J. Klein, R. Joynt, M.G. Lagally, D.W. van der Weide, S.N. Coppersmith, M.A. Eriksson, A.M. Tyryshkin, J.O. Chu, P.M. Mooney, preprint cond-mat/0411735.
  • 94
    • 84879067394 scopus 로고    scopus 로고
    • Y. Zhou, M.W. Wu, 2010, arXiv:1004.0638
    • Y. Zhou, M.W. Wu, 2010, arXiv:1004.0638.
  • 108
    • 84879046619 scopus 로고    scopus 로고
    • note
    • If the SO coupling is understood literally as a relativistic effect of coupling of electron spin to the magnetic field obtained by Lorentz transformation of static electric field in the vacuum, corresponding parameter ξ vac = λ C 2 / 2, where λ C = / mc is the reduced Compton wavelength of electron. Taking into account that λ C ≈ 0.385 × 10 - 2 gives the result for ξ vac five orders of magnitude lower than the material parameter for GaAs.
  • 115
    • 14944359481 scopus 로고    scopus 로고
    • A Fokker-Planck approach to spin relaxation at regular so coupling was suggested
    • A FokkerPlanck approach to spin relaxation at regular SO coupling was suggested by F.X. Bronold, A. Saxena, D.L. Smith, Phys. Rev. B 70 (2004) 245210.
    • (2004) Phys. Rev. B , vol.70 , pp. 245210
    • Bronold, F.X.1    Saxena, A.2    Smith, D.L.3
  • 117
    • 0037254309 scopus 로고    scopus 로고
    • Full kinetic approach for spin relaxation can be found
    • Full kinetic approach for spin relaxation can be found in: M.Q. Weng, M.W. Wu, J. Appl. Phys. 93 (2003) 410.
    • (2003) J. Appl. Phys. , vol.93 , pp. 410
    • Weng, M.Q.1    Wu, M.W.2
  • 120
    • 84879040050 scopus 로고    scopus 로고
    • D. Culcer, preprint cond-mat arXiv:0904.1999, 2009
    • D. Culcer, preprint cond-mat arXiv:0904.1999, 2009
  • 129
    • 84879055333 scopus 로고    scopus 로고
    • note
    • It is worth noting that in the case of the ionized donor scattering the spin relaxation rate can be reduced to Eq. (64) with the parameter R = π 〈 k / k F 〉 F / (2 k F L ).
  • 130
    • 77955082925 scopus 로고    scopus 로고
    • Y. Zhou, and M.W. Wu EPL 89 2010 57001
    • (2010) EPL , vol.89 , pp. 57001
    • Zhou, Y.1    Wu, M.W.2
  • 133
    • 84879040853 scopus 로고    scopus 로고
    • note
    • This value is typical for InGaAs-based structures. For symmetric GaAs QWs, where ξ is considerably smaller, the fluctuations in the electric field of the dopant ions shall lead to much longer spin relaxation times.
  • 153
    • 0000614862 scopus 로고
    • For calculations and experimental data of the deformation potential in GaAs and InAs see
    • For calculations and experimental data of the deformation potential in GaAs and InAs see: C. Priester, G. Allan, M. Lannoo, Phys. Rev. B 37 (1988) 8519
    • (1988) Phys. Rev. B , vol.37 , pp. 8519
    • Priester, C.1    Allan, G.2    Lannoo, M.3
  • 167
    • 51649124306 scopus 로고    scopus 로고
    • Spin currents can be elegantly treated in terms of the non-Abelian gauge field theory for spin-orbit coupling
    • see also Ref. [146]
    • Spin currents can be elegantly treated in terms of the non-Abelian gauge field theory for spinorbit coupling: I.V. Tokatly, Phys. Rev. Lett. 101 (2008) 106601; see also Ref. [146].
    • (2008) Phys. Rev. Lett. , vol.101 , pp. 106601
    • Tokatly, I.V.1
  • 170
    • 36849055526 scopus 로고    scopus 로고
    • Spin-Hall effect for holes
    • see e.g.
    • For spin-Hall effect for holes, see e.g. O.V. Raichev, Phys. Rev. Lett. 99 (2007) 236804
    • (2007) Phys. Rev. Lett. , vol.99 , pp. 236804
    • Raichev, O.V.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.