Determination of potential fluctuations in modulation-doped SiGe-quantum wells from conduction electron spin resonance

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 944-946

  Jantsch, W ^a   Wilamowski, Z ^b   Sandersfeld, N ^a   Schaffler F ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CHARGE CARRIERS; ELECTRON SPIN RESONANCE SPECTROSCOPY; IMPURITIES; SEMICONDUCTING SILICON COMPOUNDS;

ANDERSON TRANSITIONS; CONDUCTION ELECTRON SPIN RESONANCE; MODULATION-DOPED QUANTUM WELLS; POTENTIAL FLUCTUATIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033320488     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00560-8     Document Type: Article

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