Evidence and evaluation of the Bychkov-Rashba effect in SiGe/Si/SiGe quantum wells

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 19, 2002, Pages 1953151-1953156

  Wilamowski, Z ^a,b   Jantsch, W ^a   Malissa, H ^a   Rossler U ^c  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b INSTITUTE OF PHYSICS   (Poland)

^c UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; SILICON;

ANISOTROPY; ARTICLE; CHEMICAL STRUCTURE; ELECTRON; ELECTRON SPIN RESONANCE; QUANTUM MECHANICS; SEMICONDUCTOR;

EID: 0037113716     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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