High temperature gate control of quantum well spin memory

Physical Review Letters

Volumn 91, Issue 24, 2003, Pages

  Karimov, O Z ^a   John, G H ^a   Harley, R T ^a   Lau, W H ^b   Flatte M E ^b   Henini, M ^c   Airey, R ^d  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b UNIVERSITY OF IOWA   (United States)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^d UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRIC FIELDS; ELECTRON MOBILITY; ELECTRON SCATTERING; MAGNETIC FIELDS; RELAXATION PROCESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; TEMPERATURE CONTROL;

ELECTRON SPIN RELAXATION; QUANTUM WELL SPIN MEMORY; SPIN RELAXATION RATE; TEMPERATURE GATE CONTROL;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0942300777     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.91.246601     Document Type: Article

References (24)

1. Y. Ohno et al, Phys. Rev. Lett. 83, 4196 (1999).10.1103/PhysRevLett.83.4196
2. M.I. D’yakonov and V.?Yu. Kachorovskii, Sov. Phys. Semicond. 20, 110 (1986).
3. T. Adachi et al, Physica E (Amsterdam) 10, 36 (2001).10.1016/S1386-9477(01)00049-2
4. M.J. Snelling et al, J. Lumin.JLUMA8 45, 208 (1990).10.1016/0022-2313(90)90147-4
5. J.S. Sandhu et al, Phys. Rev. Lett. 86, 2150 (2001).10.1103/PhysRevLett.86.2150
6. G. Salis et al, Nature (London) 414, 619 (2002); 10.1038/414619a
7. for review, see D.D. Awschalom and N. Samarth, in Semiconductor Spintronics and Quantum Computation, edited by D.D. Awschalom, D. Loss, and N. Samarth (Springer, New York, 2002), Chap.�5.
8. H. Ohno et al, Nature (London) 408, 944 (2000).10.1038/35050040
9. Y.A. Bychkov and E.I. Rashba, J. Phys. C 17, 6039 (1984).10.1088/0022-3719/17/33/015
10. W.H. Lau and M.E. Flatté, J. Appl. Phys. 91, 8682 (2002).10.1063/1.1456385
11. S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990); 10.1063/1.102730
12. M.A. Brand et al, Phys. Rev. Lett. 89, 236601 (2002).10.1103/PhysRevLett.89.236601
13. M.I. D’yakonov and V.I. Perel’, Sov. Phys. JETP 33, 1053 (1971).
14. W.H. Lau, J.T. Olesberg, and M.E. Flatté, Phys. Rev. B 64, 161301 (2001).10.1103/PhysRevB.64.161301
15. For review, see M.E. Flatté, J.M. Byers, and W.H. Lau, in Semiconductor Spintronics and Quantum Computation, edited by D.D. Awschalom, D. Loss, and N. Samarth (Springer, New York, 2002), Chap. 4.
16. R.S. Britton et al, Appl. Phys. Lett. 73, 2140 (1998).10.1063/1.122403
17. R. Terauchi et al, Jpn. J. Appl. Phys. 38, 2549 (1999).10.1143/JJAP.38.2549
18. A. Malinowski et al, Phys. Rev. B 62, 13?034 (2001); 10.1103/PhysRevB.62.13
19. R.T. Harley et al, J. Phys. D 36, 2198 (2003).
20. B. Jusserand et al, Phys. Rev. B 51, 4707 (1995).10.1103/PhysRevB.51.4707
21. H.?-J. Polland et al, Phys. Rev. Lett. 55, 2610 (1985).10.1103/PhysRevLett.55.2610
22. G.L. Bir, A.G. Aronov, and G.E. Pikus, Sov. Phys. JETP 42, 705 (1976);
23. G. Fishman and G. Lampel, Phys. Rev. B 16, 820 (1977);
24. for review, see Optical Orientation, edited by F. Meier and B.P. Zakharchenya (North-Holland, Amsterdam, 1984).